Search results for: impurities-confined-in-quantum-structures

Impurities Confined in Quantum Structures

Author : Olof Holtz
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The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

Impurities Confined in Quantum Structures

Author : Olof Holtz
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Impurities Confined in Quantum Structures

Author : Vesna Berec
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Physics Briefs

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Proceedings of the International Symposium on Luminescence and Its Applications

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Shallow Impurities in Semiconductors

Author : Tsunemasa Taguchi
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The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

INELASTIC LIGHT SCATTERING FROM QUASI TWO DIMENSIONAL SYSTEMS IMPURITIES IN SEMICONDUCTOR QUANTUM WELL STRUCTURES AND ELECTRONS CONFINED AT GALLIUM ARSENIDE SURFACES

Author : THOMAS ARTHUR PERRY
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width. These results are consistent with assigning this peak to a 1s donor ground state to 1s resonant impurity state excitation. This represents the first observation of resonant impurity states in semiconductor multiple quantum well heterostructures.

Dissertation Abstracts International

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JJAP Letters

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Physica

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Localization and Confinement of Electrons in Semiconductors

Author : Friedemar Kuchar
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The winter school on Localization and Confinement of Electrons in Semicon ductors was the sixth of a series dealing with new developments in solid~state physics organized by the Austrian Physical Society. The school, which was held in the castle of Mautemdorf, in the federal province of Salzburg, Austria, February 19-23, 1990, was attended by about 200 participants. This is the fourth such winter school to have the proceedings published in the Springer Series in Solid-State Sciences, the earlier ones appearing as Vols. 53, 67 and 83. The contributions of the invited speakers are arranged in seven parts according to topic: quantum boxes and quantum wires; localization and the metal-insulator transition; the integer and fractional quantum Hall effects and electron-electron interactions; tunneling and localization in low-dimensional structures and superlattices; optical properties of confined systems; impurities in quantum well structures; and optical and magnetic properties of dilute mag netic semiconductor quantum well. structures. A particular intention of this book is to present relevant introductory articles alongside the most recent research reports, all written by experts in the fields of localization and condensation of electrons in semiconductors, the quantum Hall effect, lateral superlattices, ballistic transport, etc. The fascinating subject of quantum boxes (dots) and quantum wires is treated in considerable detail. Experimental techniques for producing later ally structured two-dimensional electron gas systems are described together with methods for studying their electrical and optical properties.

Nanostructures

Author : Christophe Jean Delerue
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Provides the theoretical background needed by physicists, engineers and students to simulate nano-devices, semiconductor quantum dots and molecular devices. It presents in a unified way the theoretical concepts, the more recent semi-empirical and ab initio methods, and their application to experiments. The topics include quantum confinement, dielectric and optical properties, non-radiative processes, defects and impurities, and quantum transport. This guidebook not only provides newcomers with an accessible overview (requiring only basic knowledge of quantum mechanics and solid-state physics) but also provides active researchers with practical simulation tools.

Science Abstracts

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Japanese Journal of Applied Physics

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Quantum Transport in Ultrasmall Devices

Author : David K. Ferry
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''This work is outstanding....The charm of the work lies herein, that it presents in a coherent fashion a great deal of valuable material. I strongly recommend it in particular to graduate students in experimental semiconductor physics.'' ---Contemporary Physics

Impurities Defects and Diffusion in Semiconductors Bulk and Layered Structures Volume 163

Author : Donald J. Wolford
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Semiconductors

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Chinese Physics Letters

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Chinese Journal of Physics

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The Transactions of the Institute of Electronics Information and Communication Engineers

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