Microwave dielectric materials play a key role in our global society with a wide range of applications, from terrestrial and satellite communication including software radio, GPS, and DBS TV to environmental monitoring via satellite. A small ceramic component made from a dielectric material is fundamental to the operation of filters and oscillators in several microwave systems. In microwave communications, dielectric resonator filters are used to discriminate between wanted and unwanted signal frequencies in the transmitted and received signal. When the wanted frequency is extracted and detected, it is necessary to maintain a strong signal. For clarity it is also critical that the wanted signal frequencies are not affected by seasonal temperature changes. In order to meet the specifications of current and future systems, improved or new microwave components based on dedicated dielectric materials and new designs are required. The recent progress in microwave telecommunication, satellite broadcasting and intelligent transport systems (ITS) has resulted in an increased demand for Dielectric Resonators (DRs). With the recent revolution in mobile phone and satellite communication systems using microwaves as the propagation media, the research and development in the field of device miniaturization has been a major challenge in contemporary Materials Science. In a mobile phone communication, the message is sent from a phone to the nearest base station, and then on via a series of base stations to the other phone. At the heart of each base station is the combiner/filter unit which has the job of receiving the messages, keeping them separate, amplifying the signals and sending then onto the next base station. For such a microwave circuit to work, part of it needs to resonate at the specific working frequency. The frequency determining component (resonator) used in such a high frequency device must satisfy certain criteria. The three important characteristics required for a dielectric resonator are (a) a high dielectric constant which facilitates miniaturization (b) a high quality factor (Qxf) which improves the signal-to-noise ratio, (c) a low temperature coefficient of the resonant frequency which determines the stability of the transmitted frequency. During the past 25 years scientists the world over have developed a large number of new materials (about 3000) or improved the properties of known materials. About 5000 papers have been published and more than 1000 patents filed in the area of dielectric resonators and related technologies. This book brings the data and science of these several useful materials together, which will be of immense benefit to researchers and engineers the world over. The topics covered in the book includes factors affecting the dielectric properties, measurement of dielectric properties, important low loss dielectric material systems such as perovskites, tungsten bronze type materials, materials in BaO-TiO2 system, (Zr,Sn)TiO4, alumina, rutile, AnBn-1O3n type materials, LTCC, ceramic-polymer composites etc. The book also has a data table listing all reported low loss dielectric materials with properties and references arranged in the order of increasing dielectric constant. Collects together in one source data on all new materials used in wireless communication Includes tabulated properties of all reported low loss dielectric materials In-depth treatment of dielectric resonator materials

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

The First International Symposium on Dielectric Materials and Applications (ISyDMA’2016) was held in Kenitra (4 May, 2016) and in Rabat (May 5-6, 2016), Morocco. ISyDMA’2016 provided an international forum for reporting the most recent developments in Advanced Dielectric Materials and applications. The goal of this collection of peer reviewed papers is to provide researchers and scientists from all over the world with recent developments in dielectric materials and their innovative applications. The book will be useful for materials scientists, physicists, chemists, biologists, and electrical engineers engaged in fundamental and applied research or technical investigations of such materials.

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

This proceedings contains papers presented at the Advanced Dielectric Materials: Design, Preparation, Processing and Applications; and Advanced Dielectrics for Wireless Communications symposia. Topics include design of material, materials synthesis and processing, processing-microstructure-property relationship, multilayer device materials, thin and thick films, device applications, low temperature co-fired ceramics (LTCC)for multilayer devices, microwave dielectric materials and much more.

This book addresses to the materials scientists, physicists, chemists, biologists, and electrical engineers engaged in fundamental and applied research or technical investigations on such materials. The goal of the International Symposium on Dielectric Materials and Applications conference series is to provide an innovative platform for key researchers, scientists from all over the world to exchange ideas and to hold wide ranging discussions on recent developments in dielectric materials and their new and emerging applications. The aim of ISyDMA meeting is to provide an international forum for the discussion of current research on high k-dielectric, electrical insulation, dielectric phenomena, and topics related to emerging applications.

Papers in this volume include topics such as materials synthesis and processing; relaxors; novel compositions; material design; materials for multilayer electronic devices; processing-microstructure-property relationship; applications; environmental issues; and economic/cost analysis of tomorrow's electronic devices. Includes 38 papers.

An introduction to the physics of electrical insulation, this book presents the physical foundations of this discipline and the resulting applications. It is structured in two parts. The first part presents a mathematical and intuitive approach to dielectrics; various concepts, including polarization, induction, forces and losses are discussed. The second part provides readers with the keys to understanding the physics of solid, liquid and gas insulation. It comprises a phenomenological description of discharges in gas and its resulting applications. Finally, the main electrical properties of liquids and solids are presented, in order to explain the phenomena of electrical degradation, dissipation and breakdown. Contents 1. Mathematical Examination of Dielectrics 2. Physical Examination of Dielectrics Appendix 1. List of Figures Appendix 2. List of Symbols Appendix 3. List of Useful Values Appendix 4. Reminder about Dielectric Spectroscopy Appendix 5. Reminder about Transitory Currents

Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric polymers.